Scientific organizers
Ho Won Jang
Department of Materials Science and Engineering
Seoul National University, KR
Ankur Solanki
Department of Physics
School of Technology, Pandit Deendayal Energy University (PDEU), India, IN
Conference Editor

Juan Bisquert
Universitat Jaume I,
Institute of Advanced
Materials (INAM)
Spain, ES

 

Invited Speakers
Suting Han
Shenzhen University, CN
Rohit Abraham John
ETH Zürich, CH
Jang-Sik Lee
Postech, KR
Nripan Mathews
Nanyang Technological University (NTU), SG
Yong-Young Noh
Postech, KR
Cheolmin Park
Yonsei University, KR
Henning Sirringhaus
University of Cambridge, GB
Tom Wu
UNSW Sydney, AU
Online Conference

The Online International Conference on Perovskite Memristors and Electronics 2021  took place from the 13th to the 14th of December 2021.

Halide perovskites have been noted for their exotic properties such as fast ion migration, tunable composition, facile synthetic routes, high defect tolerance, low power consumption and flexibility in addition to large light absorption coefficients, long carrier diffusion lengths. These properties have also made halide perovskites a promising material for memristors beyond optoelectronic devices. Especially, applications in the field of non-volatile resistive switching memory devices, artificial synapses, photonic devices, and sensors for the advancement of Artificial Intelligence (AI) and Internet of Thing (IoTs) for digitization of almost every aspect of our lives. This conference covered recent advances in state-of-the-art perovskite-based memristive devices and their advanced applications. Studies on fundamental mechanisms and various characteristics of perovskite-based memristors and electronics were welcome. Interesting perspectives to improve performances of perovskite-based memory, artificial synapse, logic gates, and sensing devices for real applications were discussed with invited speakers and experts of this research area. In addition to experimental works, theoretical studies including neuromorphic computation, neural networking, etc. for various electronic applications will be covered. We expected this conference to provide a lively discussion forum for the foundation of realizing next-generation halide perovskite-based memristor devices, electronics and applications.

Topics
Topics to be covered by the conference:
  • Memory devices, and logic gates using halide perovskites
  • Halide perovskites for artificial synapses and neuromorphic computation
  • Sensor applications of halide perovskites
  • Theoretical studies on halide perovskites for electronic applications
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