Surface Passivation Of FAPbI3 Perovskite By 2-Diethylaminoethanethiol Hydrochloride
Thomas Stergiopoulos a
a Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15341, Aghia Paraskevi, Athens, Greece
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
#MHPN3 - Fundamental Advances in Metal Halide Perovskites and Beyond: new materials, new mechanisms, and new challenges
Torremolinos, Spain, 2023 October 16th - 20th
Organizers: Paola Vivo, Qiong Wang and Kaifeng Wu
Oral, Thomas Stergiopoulos, presentation 306
DOI: https://doi.org/10.29363/nanoge.matsus.2023.306
Publication date: 18th July 2023

Pure black FAPbI3 (FAPI) perovskites have recently attained record photovoltaic efficiencies over 26% [1]. To stabilize the a-phase of FAPbI3 without the incorporation of methylammonium, cesium or bromide in the cubic lattice, methylammonium chloride and (often) excess of PbI2 are always added in the precursor solution to increase the crystallinity and induce preferred orientation for the perovskite layer. However, the presence of these additives can increase defects and reduce long-term stability of the film [2]. To mitigate defects and enhance the performance of the devices, surface passivation is a common strategy to heal the defective perovskite surface with a large variety of molecules bearing functional groups.

In this work, we have investigated the use of 2-diethylaminoethanethiol hydrochloride (DEAET) as a surface passivator of FAPI. The motivation behind this experiment was the fact that the -SH (thiol) group can bind strongly to Pb2+ [3], thus excess PbI2 could be mitigated and/or undercoordinated Pb2+ could be passivated. Simultaneously, the hydrophobic character of the thiols can create a barrier that prevents the infiltration of moisture and oxygen into the perovskite layer [4]. To ensure effective coverage of the FAPbI3 perovskite film with DEAET, different concentrations and solvents were tested. Upon optimization, we were able to decrease the roughness of the perovskite films by 7 nm and diminished the presence of PbI2 in the final film after annealing. With these features in hand, the films became more photoluminescent (PL) at the bandgap (1.54 eV), simultaneously increasing the PL lifetimes from 140 to over 190 ns. The enhanced non-radiative recombination led to increased open-circuit potential (from 1.04 to 1.06 V) and efficiencies (from 18.5 to 18.9%) in n-i-p solar cells, accompanied by better reproducibility. Accordingly, DEAET-treated FAPI devices did not lose any efficiency after storage in a desiccator for 1 month. The findings of this study lay the foundation for the utilization of thiol-based salts as efficient agents for interface engineering in pure FAPI devices.

We acknowledge the financial support from the Hellenic Foundation for Research and Innovation (HFRI) under the “First Call for H.F.R.I. Research Projects to support Faculty members and Researchers and the procurement of high-cost research equipment grant” (Project Number: 1027). We also thank the European Research Council (ERC) through Consolidator Grant (818615-MIX2FIX).

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