Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
Publication date: 18th July 2023
The buffer layer is a key component for perovskite memristors of high performance. The thin organic or inorganic buffer layer sandwiches the semiconductor between contacts and controls the electric behaviour of the perovskite layer, precisely at the interfaces of the memristor with binary and analog switching.[1-2] In this work, we have developed a methylammonium lead bromide (MAPbBr3) perovskite-based memristor of low endurance activation energy using an unrevealed inorganic buffer layer. The Bromide perovskite formulation is found to be stable, even for open-air device fabrications.[3] The ion migration under the applied bias is well known for halide perovskites, which causes the hysteresis in the current-voltage curves, features in memory applications. In our case, it is found that the device operates within a range of low applied voltages below 200 mV and the on/off ratio ~1 x103. With this configuration, the best device has shown high endurance of 15x104 cycles, suits for binary switching. At the same time, with no applied reset voltage, the device potentiated linearly, suits for analog switching, and the retention of this device is found to be >104 sec. Thus, the high-performed memristor is fabricated, combining the less explored perovskite with an unrevealed inorganic buffer-layer.
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