Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.112
Publication date: 18th July 2023
Halide perovskite materials are mixed electronic and ionic conductors that find use in several applications. The ionic conductivity is responsible for a memory effect that leads to undesirable hysteresis in the solar cell configuration. Alternatively, a he resistive memory configuration (memristor) this hysteresis is required and needs to be well understood to offer a good control of the conductive states. In this presentation, it is shown how conductive and insulating states are formed via migration of halide vacancy and electrochemically active metals making them useful as memristors. We show that the working mechanism and performance of the memory devices can be tuned and improved by a careful selection of each structural layer. Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite,1 the nature of the buffer layer2,3 and the nature of the metal contact4. Overall, we provide solid understanding on the operational mechanism of halide perovskite memristors that has enabled increased stabilities approaching 105 cycles with well separated states of current and further improvements expected.5
This study forms part of the Advanced Materials programme and was supported by MCIN with funding from European Union NextGenerationEU (PRTR-C17.I1) and by Generalitat Valenciana (CIGRIS/2022/150) with a funding code MFA/2022/055.
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