Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.108
Publication date: 18th July 2023
Despite recent developments in organic photovoltaic (OPV) devices at lab scales (< 1 cm2), commercially viable OPV devices suffer performance losses at scale (> 10 cm2).[1,2] This is largely due to the large series resistance exhibited by transparent conducting electrodes (TCEs), even when using current state-of-the-art transparent conductive oxides (TCOs) such as indium tin oxide. To reduce the series resistance of TCEs, one solution is to use the TCO in conjunction with a metallic grid to form gridded-TCEs (g-TCEs),[3–5] which essentially divides a cell into an array of smaller sub-cells.[6] Although TCO materials exhibit a trade-off between average visible transmittance (AVT) and conductivity, the use of TCOs with metallic grids allows the electro-optical properties of high-performance TCEs to be optimised. In this work, the scaling-related performance barrier is presented for OPVs. The performance impact of critical grid geometry is studied with varying light intensity for different OPV applications. At high irradiances, smaller grid critical dimensions (CD) result in improved OPV device performance and can be combined with TCOs with high AVT. At low irradiances, the requirement for a highly conductive TCE reduces, because of the reduced photocurrent, allowing coarser (greater CD) grid structures to be utilised. As grid structures with high topographies result in challenging surface morphologies for scalable printing techniques, a method to recess metallic grids into substrates is demonstrated through exemplary planar (± 30 nm) 5 cm2 g-TCEs, demonstrated with silver nanowires and aluminium-doped zinc oxide (AZO). The AZO g-TCEs were shown to provide a sheet resistance of 0.5 Ω/□, with AVT greater than 77 %. These results show that high-performance g-TCE structures are a highly versatile approach for utilising OPV in various applications.
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