Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.064
Publication date: 18th July 2023
One of the major challenges in perovskite research today is the fabrication of stable perovskite materials for optoelectronic applications without performance loss.
To improve the stability of metal halide perovskite films and devices, layered (2D) perovskites are frequently used as a passivating layer. This improved long-term stability, however, often comes at the expense of device performance. More fundamental understanding of the perovskite material is needed to understand this effect. In a recent study, we therefore used pulsed, transient photoconductivity, to estimate the long-range mobility of phase-pure 2D perovskites.[1,2] To our surprise, we discovered that PEA2PbI4, a well-studied 2D material, has an 8 times higher long-range mobility than FA0.9Cs0.1PbI3, a typical three-dimensional perovskite. To gain a better understanding, we used optical probe terahertz spectroscopy to measure short-range mobility and found an identical value for the mobility of the 2D material, indicating superior material quality. We also hypothesize that the main reasons for the underperformance of perovskite device stacks with 2D passivation are the high exciton fraction and the anisotropy of charge carrier transport.
Using our newly acquired knowledge, we attempted to find an improved 2D passivation layer. We begin by screening a variety of candidates using similar methods to those used in previous studies to find one with improved optoelectronic properties as compared to PEA2PbI4. Most importantly, we are attempting to modify the exciton binding energy and structural properties of the materials. Our findings show that multiple parameters influence the formation of 2D perovskites, which governs the optoelectronic properties of the final thin films.
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