New tetraphenylethene-based molecules for realization of blue non-doped aggregation-induced emission OLEDs
Raminta Beresneviciute a, Daiva Tavgeniene a, Gintare Krucaite a, Beata Achramovic a, Saulius Grigalevicius a, Jian-Sheng Hong b, Kuan-Wei Chen b, Yu-Hsuan Chen b, Chih-Hao Chang b
a Department of Polymer Chemistry and Technology, Kaunas University of Technology, Radvilenu pl. 19, 50254, Kaunas, Lithuania
b Department of Electrical Engineering of Yuan Ze University, Chung-Li, 32003, Taiwan
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
#NANOFUN - Functional Nanomaterials: from optoelectronics to bio- and quantum applications
Torremolinos, Spain, 2023 October 16th - 20th
Organizers: Milena Arciniegas, Iwan Moreels and Gabriele Raino
Poster, Raminta Beresneviciute, 016
Publication date: 18th July 2023

Organic light-emitting diodes (OLEDs) is a suitable technology for lighting and display applications because it demonstrates attractive features, including wide viewing angles, low power consumption, high color quality, and the ability to be rendered flexible/stretchable. Organic compounds with good emission properties at aggregate solid state, that are, aggregation-induced emission, aggregation-induced emission enhancement, or crystallization-induced emission enhancement properties, attract considerable attention nowadays [1]. In this study, new structure aggregation-induced emission properties demonstrating tetraphenylethene-based materials were synthesized and characterized as emitting layer for OLED devices.

The objective materials demonstrated good thermal stability and also high values of melting temperatures in the region of 232−274 ᵒC. Thin homogenous layers could be formed from the blue light-emitting derivatives using the thermal evaporation method. Considering the energy bandgap of the AIE compounds, the layers adjacent to the emitting layer (EML), including the hole transport layer (HTL) and the electron transport layer (ETL), should be carefully selected to facilitate smooth carrier transport and exciton confinement.The device architecture of non-doped OLEDs was constructed as follows: ITO (120 nm)/TAPC doped with 20 wt.% MoO3 (30 nm)/TAPC (20 nm)/TPE1, TPE2, or TPE3 (30 nm) emitter/TmPyPB (50 nm)/LiF (1.2 nm)/Al (120 nm), where LiF and aluminum serve, respectively, as the electron injection layer and cathode. The most efficient blue light-emitting device using TPE2 as emitter achieved the highest efficiency values of 3.4% (8.8 cd/A and 7.3 lm/W). The characteristics demonstrated that the chemical structures are promising for the preparation of AIE emitters for fluorescent light-emitting devices.

We gratefully acknowledge the funding support from the National Science and Technology Council of Taiwan, under the grant number (MOST 110-2221-E-155-033-MY2 and MOST 111-2221-E-155-012-MY2) and support from the Research Council of Lithuania (grant No. S-MIP-22-84).

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