Proceedings of MATSUS Fall 2023 Conference (MATSUSFall23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.010
Publication date: 18th July 2023
Electrochemical random access memory (ECRAM) and organic electrochemical transistors (OECT) are gaining significant attention due to the unique properties introduced via the mobile ions. Despite the progress in device fabrication, there is very little in terms of device models.[1] Here, we will describe results obtained using a 2D semiconductor device model that incorporates ions in a self-consistent manner.
For example, although OECTs electrolytes contain both cations and anions, it is common to consider only the primary ion (as a cation in a normally-off p-type transistor). We simulated three scenarios for the anions in the OECT: static anions, mobile anions that are confined to the electrolyte, and mobile anions that can penetrate the organic semiconductor. Our results indicate that the anion transport can affect the ON/OFF ratio and the transconductance of the OECT.
Inorganic ECRAM transistor devices have a structure similar to OECT, where the memory (ion retention) is provided by the diffusion's very high electric field activation. Comparing measured multi-level potentiation [2] to detailed device simulation, we reveal the role of electrolyte polarisation. We also show that sublinear potentiation response can be explained by an electrochemical reaction similar to that of lithium plating in batteries. Namely, electrochemical reactions must be considered when dealing with electrochemical devices.
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