Publication date: 1st December 2021
To integrate cross-bar array (CBA), which has advantages of 4F2 cell size and fast accessibility, sneak current problem must be solved to prevent disturbance of writing and reading operation. So, memory cells should be connected with selection devices in series to mitigate the sneak current. A diffusive memristor is a device where the filament, which maintains its conducting state in conventional memristors, can be formed only when the applied voltage reaches certain threshold voltages and demolished within the voltage range lower than the threshold voltage. This type of threshold switching layer can be utilized as one selector to rectify the undesired currents flowing through the ON-state cell. Recently, organolead halide perovskite (MAPbI3) resistive random-access memory is reported that has the advantages of fast ion migration and ultra-low operation voltage. We fabricated the diffusive memristor based on MAPbI3 by inserting Ag clusters in the matrix. There is repulsion force between the filament which comes from Ag top electrode and Ag clusters in the matrix, resulting in diffusive filament. It shows a high on/off ratio (104) and ultra-low threshold voltages (0.207V and -0.206V). Furthermore, it has small variations in the distribution of threshold voltages and reversible on/off switching of 120 cycles. Furthermore, by changing a metal electrode, the device showed resistive switching by which the resistance switched between high (HRS) and low (LRS) resistance state. Ag clusters in the matrix participate in the formation of conducting filament and this type of resistive switching layer can act as 1 resistor to retain programmed states. Connecting the 1 selector and 1 resistor, we confirmed that sneak current can be suppressed until a maximum array size of 5.6 ⅹ 105. This study will allow the stable operation of CBA to make emerging technologies an effective solution in the memory industry.
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