Publication date: 1st December 2021
Resistive random-access memory (ReRAM) devices have been gaining considerable interest due to their non-volatile switching properties allowing in-memory computing analogous to the synaptic response in the human brain.1,2 The evolution of device properties in memristor switching between high and low resistance states is critical for applications and is still highly subjected to significant ambiguity. Here, we present the dynamic state transition in a 2D Ruddlesden-Popper perovskite-based memristor device, measured via impedance spectroscopy.3 The spectral evolution of the transition exhibits a significant transformation of the low frequency arc to a negative capacitance arc, further decreasing the device resistance. The interfacial reactivity between the perovskite and Ag metal contact resulted to a gradual state transition, indicative of a non-filamentary switching mechanism, wherein the distinct, well defined low frequency arc transformed into a persistent negative capacitance arc during the device transition state. In contrast, a thin, undoped Spiro-OMeTAD interfacial layer, acting as a physical barrier with a higher overall resistance, impeded the reactivity between the migrating ions and the metal contact. Consequently, the ReRAM device with the Spiro-OMeTAD interfacial layer exhibited a higher ON/OFF ratio with an abrupt transition from the OFF state to the ON state, suggesting the filament formation within the Spiro-OMeTAD layer, but did not feature the negative capacitance arc. The insight in the dynamic state transition investigated by IS would allow for ReRAM device designs with tailored switching properties in terms of the ON/OFF ratio, threshold voltage, and transition state control.
We thank the financial support by Generalitat Valenciana for a Prometeo (PROMETEU/2020/028), Grisolia Grant (GRISOLIAP/2019/048) and Ministerio de Ciencia y Innovación (PID2019-107348GB-100).
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