Publication date: 8th June 2021
Gallium nitride (GaN) has been extensively studied due to its potential for optoelectronic devices. However, the previous studies for synthesis of GaN required harsh synthetic conditions such as high temperature (~1000℃), high pressure, and long reaction time. Here, we present a new synthesis method for GaN CQDs using a hot-injection method under a substantially lower temperature (<300℃). By adjusting the reaction conditions, the bandgap transition of GaN CQDs was changed due to the quantum confinement effect. Also, we doped the GaN CQDs with zinc metal impurities, leading to the redshift of the photoluminescence from the ultraviolet to the visible regime. Also, the origin of blue emission was investigated by time-resolved photoluminescence. The tunable blue emission of GaN CQDs has a great potential for blue light luminophores.
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, & Future Planning (NRF-2016R1C1B2013416) and by LG Display under the LGD-KU Incubation Program.
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