DOI: https://doi.org/10.29363/nanoge.incnc.2021.057
Publication date: 8th June 2021
Until recently, originating from covalent nature in crystal bonding and the surface dangling bond as well as oxophillic nature of the element, synthesis and surface chemistry of III-V (InP, InAs, InSb) nanocrsytals are lagging behind compared to other ionic nanocrystals. In this presentation, I will present two specific challenges in III-V nanocrystal synthesis. First, we present covalent tetrapod InAs and InP nanocrystals as a crystalline “late intermediate” that warrants atomically controlled colloidal nanocrystal growth. We present the use of the late intermediate with well-defined facets at the sub-10 nm scale for directional growth with atomic control and highlight the potential for the new directed approach of nanocrystal synthesis. Second, we present a route of synthesizing highly mono-dispersed InAs colloidal quantum dots in wide size-range by continuously introducing amorphous InAs nanoclusters as a single-source precursor on nanocrystal seeds. Our synthesis using InAs nanoclusters as a source of monomer resulted in induced focusing otherwise challenging with conventional precursors used for III-V quantum dot synthesis. Further, using a modified Fick’s law,, we find that the growth of InAs QD is mainly dominated by the monomer diffusion dynamics and a continued precursor injection reduce the effective monomer concentration in the solution, lead to a decline of the monomer concentration gradient thus slow down the growth. Diffusion-dynamics-controlled chemical process finally provides a route of creating highly monodispersed InAs colloidal quantum dots enabling short-wavelength IR photon over 1700 nm.1
This work was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF-2019M3D1A1078299,2019R1A2B5B03070407) funded by Ministry of Science and ICT.
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