DOI: https://doi.org/10.29363/nanoge.incnc.2021.039
Publication date: 8th June 2021
Light-emitting field-effect transistors (LEFETs) are an emerging type of optoelectronic devices which combine electrical switching and light emission. Application of lead chalcogenide colloidal quantum dots (CQDs) in LEFETs allows to tune the emission of these devices continuously in the near-infrared region, reaching spectral regions which are impossible to reach with other solution-processable materials. In a recent work, we have demonstrated the first fully solid PbS CQD based LEFET showing an electroluminescence (EL) quantum efficiency of 1.3×10−5 at room temperature and about 1% below 100 K. In this work, we present devices exhibiting an order of magnitude higher EL quantum efficiency, obtained by using an active material comprising two sequentially deposited layers, the first of PbS CQDs, the second of polymer-wrapped semiconducting carbon nanotubes. The combination of these two materials results in well-balanced ambipolar transport and high charge carrier mobility of about 0.2 cm2/Vs for both electrons and holes. Maximum EL external quantum efficiency of 1.2×10-4 is achieved at room temperature.
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