DOI: https://doi.org/10.29363/nanoge.incnc.2021.035
Publication date: 8th June 2021
Metal halide perovskites with low content of Pb have been synthesized with the purpose to make available the commercialization of less toxic and highly efficient devices. However, these materials do not preserve the intrinsic features of their Pb-based counterparts, giving a dilemma about the convenience of Pb substitution.[1] Here, we analyze the impact of Sr as potential dopant on the photophysical and structural properties of FAPbI3 quantum dots (QDs). The replacement of Pb by 7 at. % Sr facilitates the preparation of FAPb1-xSrxI3 QDs with 100% photoluminescence quantum yield, long-term stability for 8 months under relative humidity of 40-50%, and T80 = 6.5 months. This value is one of the highest values reported for halide QDs under air ambient. This material also depicts photobrightening under UV irradiation for 12 h, recovering the 100% PLQY 15 days after synthesis. The suppression of Schottky defects (Pb- and I-vacancies) by the presence of Sr restrains the non-radiative channels for electron relaxation.[2] Nevertheless, the increase of the Sr fraction during the QDs growth induces the emergence of 2D nanoplatelets/3D nanocubes mixture, caused by a high Pb deficiency during QDs synthesis. This work provides a novel insight about how the adequate/poor Pb substitution dictates the photophysical properties of QDs potentially applicable in optoelectronics.