Publication date: 3rd July 2020
We present a second-generation hole transporting materials capable of forming a self-assembled hole-selective monolayer (SA-HSM).
Perovskite p-i-n architecture solar cells with the second generation SA-HTMs demonstrated very promising power conversion efficiency close to 21% and average fill factor of over 80%. Due to the excellent bonding to the substrate surface, these layers are relatively tolerant against perovskite processing and can ensure a conformal coverage of textured surfaces. Application of the developed materials in tandem perovskite/silicon solar cells resulted in record 29.15 % efficiency devices.
Forming SA-HSM on the transparent electrode circumvents the disadvantages of spin-coating while offering the benefits of uniformly formed layers with minimized thickness, very low material consumption (1 g of the material is enough to cover up to 1000 m2 of the surface) and helps to avoid doping procedures. The materials are commercially available from Tokyo Chemical Industry Co., LTD or Dyenamo AB.
These materials were developed for the application in perovskite solar cells, however ease of structural modifications and use of versatile anchoring group opens the path for application in other areas as well, for example quantum dots and quantum dot-based devices.