Publication date: 3rd July 2020
Semiconductor quantum dots (QDs) are an easily tunable family of materials with excellent optoelectronic properties. With appropriated QD synthesis and surface passivation is possible to decrease the non-radiative recombination pathways, increasing significantly the photoluminescence quantum yield (PLQY) in comparison with their bulk counterparts. These properties give quantum dots an immense potential for the development of optoelectronic devices, including energy applications in photovoltaic devices. Beyond the direct application of colloidal QDs in the light harvesting, PbS QDs can interact synergistically with halide perovskite in order to produce halide perovskite solar cells with enhanced properties. We show that the interaction of PbS quantum dots and nanoplatelets can produce the stabilization of FAPbI3 perovskite black phase and also the increase of the efficiency, stability and reproducibility of the photovoltaic devices prepared with FAPbI3. The use of PbS nanoplatelets also improve the long term stability of CsFAPbI3 perovskite. Incorporation of PbS QDs allows the dramatic decrease of the annealing temperature for the formation of black FAPbI3 phase perovskite thin film, from the 170ºC required without QDs to 85ºC when QDs are present. This result points the interest of Perovskite-Quantum Dot Nanocomposites, for further development of advanced optoelectronic devices.
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