Publication date: 15th November 2022
Sn-based perovskite materials, as eco-friendly alternative light absorbers, are widely studied in recent years. Compared to lead-based perovskite, Sn-based perovskite is less harmful for the environment and their band gap (~ 1.2 eV) is closer to the optimum Shockley–Queisser limit band gap (1.34 eV).[1] Therefore, they have the potential to achieve the highest power conversion efficiency (PCE) with a near-infrared light absorption edge.
Here, we report a positive light soaking effect in formamidinium tin iodide (FASnI3) perovskite solar cells, which improved the device performance. The enhancement of PCE could be from the decrease of trap density as evidenced by the steady state photoluminescence (PL) and time-resolved PL measurements. The decrease of trap denisty could be due to the reduction of Sn(IV) to Sn (II) under continuous light exposure in N2 condition.[2] In addtion, we also used ethylenediammonium diiodide (EDAI2) to passivate the perovskite surface. This light soaking effect has been enhanced in FASnI3-EDAI2 device and a champion device efficiency of 9 % was obtaiend after 3 hours of light soaking.
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