Growth of Hierarchical Cu–Ti–O Nanostructures
Julia Kunze-Liebhäuser a b, Ying Chen a b, Engelbert Portenkirchner b, Francesco Fumagalli c, Fabio Di Fonzo c
a Technische Universität München, Karlstraße 45, München, 80333, Germany
b University of Innsbruck, Institute of Physical Chemistry, Innrain 52c, 6020 Innsbruck
Proceedings of International Conference on Light Driven Water Splitting Using Semiconductor Based Devices (SolarFuel15)
Illetes, Spain, 2015 March 11th - 13th
Organizers: Leslie Frotscher, Sixto Gimenez Julia, Wolfram Jaegermann and Bernhard Kaiser
Poster, Engelbert Portenkirchner, 096
Publication date: 15th December 2014

Titania (TiO2) is an important n-type semiconductor that exhibits excellent charge transfer properties and photochemical stability [1]. Self-organized nanotubular TiO2 arrays can provide a large surface area and a uniform morphology [2]. The wide bandgap, however, limits its applications to UV or X-ray induced interactions. Doping TiO2 with transition metals is an effective method to engineer bandgap, structure and phase. For example, Co doping of TiO2 catalyzes the anatase-to-rutile transformation [3]. In this work, Ti-Cu-O nanostructures have been produced in order to engineer the bandgap through the presence of copper oxide (Eg(Cu2O)=2.0–2.2eV and Eg(CuO)=1.2–1.5eV). Either nanotubular or nanoporous Ti-Cu-O films are grown by electrochemical anodization of Ti-Cu alloy thin films in NH4F containing ethylene glycol electrolyte. Regular self-organized nanotube arrays are achieved in case of the anodization of a Ti-Cu alloy with low Cu content (10 at%). At higher Cu content, porous films with a thickness of 200 nm are produced. The growth rate of self-organized Ti-Cu-O nanotubes is found to be higher than that of self-organized TiO2 nanotubes. Mott-Schottky analysis reveals that self-organized Ti-Cu-O nanotubes show n-type behavior, while porous Ti-Cu-O nanostructures grown from Ti-Cu alloys with 75% Cu content show p-type behavior.



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