Publication date: 15th December 2014
In this study, PEC properties of BaTaO2N photoanodes are investigated. The series of BaTaO2N photoanodes were prepared by particle transfer method using Ta, and Ti layers as a contact, and conductor layers by Radio Frequency magnetron sputtering, respectively. The optimal deposition temperature of the Ta contact layer was determined around 873 K. Co-Pi modification not only increased the photocurrent but also enhanced the onset potential of BaTaO2N/Ta/Ti photoanodes. Co-Pi modified BaTaO2N/Ta/Ti photoanodes showed large photocurrent of 25 mA cm-2 at 1.2 V (vs. RHE) under visible light from filtrated 300 W Xe lamp. Under simulated sunlight irradiation, Co-Pi modified BaTaO2N/Ta/Ti photoanodes showed photocurrent without clear degradation for beginning an hour followed by gradual decrease of photocurrent at 0.8 V (vs. RHE). By photocurrent-time measurement, the faradaic efficiency of Co-Pi modified BaTaO2N/Ta/Ti photoanodes was about 100% and half-cell solar to hydrogen efficiency at 0.8 V (vs. RHE) was 0.5% for initial photocurrent of 0.9 mA cm-2 and 0.4% for the photocurrent at 6 hours passed of 0.7 mA cm-2, respectively.
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