PLD deposition of BiVO4 photoanodes for photoelectrochemical devices
Teresa Andreu a, Cristian Fàbrega a, Carles Ros a, Damian Monllor-Satoca a, Sebastian Murcia-Lopez a, Joan R. Morante a b, Maria D. Hernandez-Alonso c, German Penelas c
a Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, Sant Adria del Besos, Spain
b University of Barcelona (UB). Dept. Electronics, Martí i Franquès, 1. 08028 Barcelona. Spain, Spain
c Repsol Technology Center, Carretera de Extremadura A-5, km 18, 28935 Móstoles, Madrid, Spain
Proceedings of International Conference on Light Driven Water Splitting Using Semiconductor Based Devices (SolarFuel15)
Illetes, Spain, 2015 March 11th - 13th
Organizers: Leslie Frotscher, Sixto Gimenez Julia, Wolfram Jaegermann and Bernhard Kaiser
Poster, Teresa Andreu, 041
Publication date: 15th December 2014

Bismuth vanadate has attracted increasing attention as a metal oxide based photoanode for photoelectrochemical devices, for both, water splitting and CO2 reduction, with a bandgap in the visible range (2.4-2.5eV) and a valence band position close to that of TiO2, which allows a free bias solar water splitting when coupled with an adequate photocathode (Cu2O, Si). Recent efforts on the synthesis by reactive sputtering, as a scalable thin film deposition technique, led to very complicated deposition procedures employing separate targets. In this work, we report an alternative deposition technique based on pulsed laser deposition (PLD) that allows the synthesis of stoichiometric BiVO4 using one single target. Uniform thin film layers up to 4-inch can be obtained with this equipment. Furthermore, an ultrathin TiO2 layer was applied using Atomic Layer Deposition that acts as surface passivation in order to suppress its intrinsic photocorrosion in alkaline media, as well as the deposition of an adequate OER catalyst for water oxidation. Finally, results on free bias hydrogen production will be shown.



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