Publication date: 1st July 2014
Solar cells based on nanostructural ZnO with semiconductor sensitizer (semiconductor-sensitized solar cell (SSSC)) consist of environmental friendly components and provide a wide range of light absorption, good stability and low preparation costs.
Substitution of a dye (typically used in Graetzel DSSCs) with a n-type semiconductor in the form of quantum dots (QDs) allow avoiding the problem of ZnO instability in the presence of acidic groups of the dyes. Semiconductor QDs offer also other significant advantages over dyes, such as higher extinction coefficient and easily tuned band gap from infrared to ultraviolet by a control of QD size and composition.
This work is focused on preparation and characterization of SSSCs based on ZnO nanorods covered with CdS and CdSe quantum dots by SILAR (successive ionic layer adsorption and reaction) technique. It is shown that quantity and quality of deposited semiconductor layer have a great influence on efficiency of SSSC. The most promising results obtained for multilayer system in which both semiconductor are deposited in order ZnO/CdS/CdSe, which is effect of electronic band structure. The application of two layers system leads to broadening the absorption spectral region. In addition CdS interlayer between ZnO nanorods and CdSe QDs passivates the ZnO suppressing the charge carrier recombination and in effect, the power conversion efficiency of the cell is increased.
The photoelectrochemical responses of the ZnO/CdS/CdSe systems were studied in aqueous solution of Na2SO3 as the hole scavenger. The studies were focused on the relationship between the number of SILAR cycles and performance of the device.
Acknowledgement: This work was partially supported by Polish National Science Centre (grant 2011/03/N/ST5/04712).
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