Publication date: 1st July 2014
After pioneering studies by Hodes’s [1] and Larramona’s [2] groups on Sb2S3-based semiconductor sensitized solar cells, there is growing photovoltaic interest in the VA-VIA group compound semiconductors. Very recently, we [3] proposed–in parallel with Il Seok’s [4] and Tang’s [5] groups- solution processed Sb2Se3 as an innovative light harvester for semiconductor sensitized solar cells. Thanks to the well-suited bandgap (i.e. ~ 1.2 eV) and the efficient collection of electrical charge carriers, photogenerated from the NIR photons, short circuit photocurrents higher than 22 mA/cm2 [4] have been reached in solution processed Sb2Se3-based single-junction devices. However, the open circuit voltage remains unexpectedly modest (i.e. around 300 mV), limiting the power conversion efficiency of the solar cells. In particular, TiO2/Sb2Se3/CuSCN planar heterojunction solar cells based on electrodeposited Sb2Se3 films show a power conversion efficiency of 2.1 % (Jsc ~ 18 mA/cm2 and Voc ~ 302 mV) [5]. As is the case for solution processed Sb2S3 and Sb2S3 in general, the chemical nature and accurate stoichiometry of the electrodeposited Sb2Se3 films isstill unclear. In addition to the TiO2/Sb2Se3/CuSCN solar cell preparation and characterization, a detailed characterization of the Sb2Se3 films by spectroscopic techniques (X-ray and Ultraviolet Photoemission Spectroscopies, XPS and UPS) will be presented here. The XPS results indicate a significant Sb2O3 content and non-stoichiometric Sb2Se3 phases in the films. The work function and valence band maximum values of the films, determined by UPS studies, will also be given. Furthermore, a tentative band diagram for the TiO2/Sb2Se3/CuSCN heterostructure will be proposed in order to provide further insights into the reported limitations of the photovoltage of Sb2Se3-based solar cells.
References:
[1] Y. Itzhaik, O. Niitsoo, M. Page, G. Hodes, J. Phys. Chem. C 2009, 113, 4254−4256.
[2] C. Chone, G. Larramona, (IMRA Europe), French Patent
[3] T.T. Ngo, S. Chavhan, I. Kosta, O. Miguel, H-J. Grande, R. Tena-Zaera, ACS Appl. Mater. Interfaces 2014, 6, 2836−284.
[4] Y. C. Choi, T.N. Mandal, W.S. Yang, Y.H. Lee, S.H. Im, J.H. Noh, S. Il Seok, Angew. Chem. Int. Ed., 2014, 126, 1353–1357.
[5] Y. Zhou, M. Leng, Z. Xia, J. Zhong, H. Song, X. Liu, B. Yang, J. Zhang, J. Chen, K. Zhou, J. Han, Y. Cheng, J. Tang, Adv. Ener. Mater. 2014. DOI: 10.1002/aenm.201301846
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