Organo-metal halide perovskite solar cells with inorganic hole selective contacts
Sudam Chavhan a, Ivet Kosta a, Oscar Miguel a, Hans Grande a, Ramon Tena-Zaera a, Ivan Mora-Sero b, Eva Barea b, Victoria Gonzalez-Pedro b
a CIDETEC, Parque Tecnológico de San Sebastián, Spain, Paseo de Miramón, 196, San Sebastián, Spain
Oral, Ramon Tena-Zaera, presentation 009
Publication date: 1st July 2014

The extremely rapid evolution of the perovskite solar cells during the last 2 years [1-3] makes them a very appealing cost- and performance-competitive photovoltaics emerging technology. The state of the art power conversion efficiencies (15-18 %) reached by using different electron transporting materials (TiO2, ZnO, (6,6)-phenyl C61-butyric acid methyl ester –PCBM-), perovskite variants (CH3NH3PbI3-xClx, Y= Br, Cl) and device architectures (e.g. mesoscopic and planar-based junction) evidence the large versatility and wide room for further progress in the perovskite photovoltaics technology. Nevertheless, the spiro-OMeTAD or conducting polymers are commonly used as hole transporting materials (HTMs). However, the use of solution-processed inorganic HTM appears to be an appealing alternative in terms of cost and device robustness. Among the few reports on inorganic HTM [4-9], CuSCN [8,9] appears to be one of the most promising candidates (i.e. devices with power conversion efficiencies of 12.4 %). A piece of work on the use of CuSCN as HTM in perovskite solar cells with different architectures, including perovskite films processed by different techniques, will be presented here. A comparative analysis of the solar cell performance with respect to reference devices with spiro-OMeTAD and without HTM will be shown in order to emphasize the CuSCN role and influence in the perovskite solar cell performance. A correlation between the differences in the device performance and properties of the HTM as well as the perovskite/HTM interface will be introduced. In particular, some advanced processing strategies to improve the perovskite/CuSCN interface will be proposed. A critical analysis about the influence of pinholes in the perovskite film and consequent TiO2/CuSCN local interfaces will be also shown. All in all, an overview about the potentiality of CuSCN as hole selective contact in perovskite photovoltaics technology and crucial information for its successful integration will be given.

References:

[1] H-S. Kim et al., Sci. Rep. 2 (2012) 591-598.

[2] M.M. Lee et al., Sicence 338 (2012) 643-647.

[3]http://www.nrel.gov/ncpv/images/efficiency_chart.jpg

[4] J.A Christians et al., J. Am. Chem. Soc. 2014, 136, 758−764

[5] J-Y. Jeng et al. Adv. Mater 2014. DOI: 10.1002/adma.201306217

[6] A.S. Subbiah et al., J. Phys. Chem. Lett., 2014, DOI: 10.1021/jz500645n

[7] K-C. Wang et al., Sci. Rep. 2014, 4, 4756; DOI:10.1038/srep04756

[8]P. Qin et al., Nat. Commun. 2014, 5:3834 doi: 10.1038/ncomms4834.

[9] S. Chavhan et al., 2014, J. Mater. Chem A. (submitted)



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