Publication date: 10th April 2024
Neuromorphic computing and memory devices using memristive effects have the potential to contribute fast and non-binary computing beyond transistors. Lithium based oxides like lithium titanate (i.e., spinel Li4Ti5O12) provide ample opportunities to switch resistively due to the strong electronic state-lithiation coupling and multiple phases existent beyond their typical use in battery anodes.[1,2] Recently, it was demonstrated that above band gap illumination could lead to enhancement of ionic transport in doped binary oxides by modulating space charge barriers at grain boundaries.[3] In this work we employ photoconductive Atomic Force Microscopy (phAFM) and observe photocurrent generation, consistent with the presence of space charge layers at interfaces in lithium titanate thin films. Phototitration measurement at varied bias voltage reveals the existence of a memristive effect, and that the current is much more rapidly generated upon switching under the 375 nm light illumination. Furthermore, we test the memristive switching characteristics between dark and under illumination for cross-bar measurements up to 200 kV/cm. The memristive device shows a noticeable difference under the dark vs. light; the photomemristive behavior shows a gradual increase of current with time with a concomitant decrease in device resistance. Collectively, we demonstrate an opto-ionic effect for lithium titanate films allowing for memristive operation with a wider range of read/write options for next-generation opto-memristor devices.