Publication date: 10th April 2024
Solid oxide electrolysis and fuel cells (SOEC/SOFC) have drawn much attention due to their outstanding efficiency and superior fuel flexibility [1-3]. However, a significant challenge in scaling SOEC/SOFC technologies is the degradation of cells during operation. To address this, advanced operando characterization needs to be developed, which may offer insights into the mechanisms behind cell degradation.
Electrochemical impedance spectroscopy (EIS) emerges as a powerful technique for the nondestructive investigation of degradation in the solid oxide cell, or its individual components [4]. Integrating EIS with operando transmission electron microscopy (TEM) allow us to perform detailed structural and compositional analyses during EIS testing. In previous research, we successfully achieved analysis of pure gadolinia-doped ceria (CGO) material in relevant gas environments, at elevated temperatures, and under electrical polarization inside a TEM, and introduced the EIS-TEM methodology. This was achieved by combining an environmental TEM (ETEM) with a heating-biasing holder and a special sample preparation procedure [5, 6].
Based on previous works, this study employs the EIS-TEM methodology to investigate a model solid oxide cell composed of CGO electrodes and an yttria-stabilized zirconia (YSZ) electrolyte. The cell was fabricated using pulsed laser deposition (PLD) followed by focused ion beam scanning electron microscopy (FIB-SEM) processing. We determined the activation energies for YSZ ion transport and CGO surface reactions to be 0.9 eV and 0.5 eV, respectively, which are in close agreement with the literature. This study demonstrates the viability of conducting direct SOEC/SOFC cell tests within a TEM, including EIS analysis during operation, thereby providing profound insights into the reaction mechanisms of the cell.
This project has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement No 850850).