Mixed Protonic and Electronic Conductivity of Nb-doped TiO2 Under Hydrogen Atmosphere
Takuma Shiraiwa a, Tomoyuki Yamasaki b, Takahisa Omata b
a Tohoku University, 2-1-1 Katahira, Aoba-ku, sendai, 9808577, Japan
b Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
Proceedings of 24th International Conference on Solid State Ionics (SSI24)
Emerging Materials for High-Performance Devices
London, United Kingdom, 2024 July 14th - 19th
Organizers: John Kilner and Stephen Skinner
Oral, Takuma Shiraiwa, presentation 257
Publication date: 10th April 2024

Mixed protonic and electronic conductors are promising materials for electrodes in hydrogen-related electrochemical devices and are essential for the realization of high-performance fuel cells, electrolysis cells, and hydrogen separation membranes. Materials exhibiting oxide ionic conduction in addition to protonic and electronic conduction termed as the triple-conducting oxides recently attract much attention as a proton-conducting mixed conductor; however, their working temperature is limited at >600 °C. Because the operating temperatures of fuel cells and electrolysis cells are expected to be lower, extending into the intermediate temperature range of <500 °C, it is necessary to explore new mixed protonic and electronic conductors that work by a different mechanism than conventional ones. Hydrogen is known to dissolve in n-type oxide semiconductors and behave as a donor according to the following reaction: H2 → 2Hi+ 2e’. The protons generated by this reaction are expected to be highly mobile because their countercharges are not immobile point defects but electrons that are delocalized throughout the crystal. Here, the dissolution of hydrogen into the Nb-doped TiO2 crystal and its mixed protonic and electronic conductivity in H2 were investigated.

Total electrical conductivity that corresponds to the partial electronic conductivity varied in response to the atmosphere (air or H2) and was larger in H2 than in air. It was over 1 Scm−1 at above 200 °C in H2. The electron carrier density in air was 1.3×1018 cm−3 and increased to 1.3×1019 cm−3 after annealing in H2. Thermal desorption spectrometry showed the H2 and H2O gas emissions only from the sample annealed in H2. The amount of H2 and H2O released was converted to the proton densities in the Nb-doped TiO2 of 2.8×1019 and 3.5×1020 cm−3, respectively. Since the increase in electron carrier density and the amount of H2 released after H2 annealing were almost the same, the increase in total electrical conductivity in H2 is due to the increase in electron carrier density resulting from the dissolution of hydrogen and its ionization according to the above reaction. The reason why protons released as H2O do not generate electron carriers is not yet clear. The partial protonic conductivity was determined by dc and ac impedance methods using a proton-conducting glass electrolyte as an electron-blocking electrode. It varied from 2×10−4 Scm−1 at 200 °C to 1×10−3 Scm−1 at 250 °C with an activation energy of 0.74 eV. Its partial protonic conductivity of 1×10−3 Scm−1 at 250 °C is only an order of magnitude smaller than that of BaZrO3-based electrolyte at ~600 °C, which is extremely high despite the low temperature. Assuming that all dissolved protons with a density of 3.8×1020 cm−3 contribute to the protonic conductivity, their diffusion coefficient was calculated to be 7×10−7 cm2s−1 at 250 °C, which is larger than the previously reported 1×10−8 cm2s−1 for pure TiO2 [1]. This may be because the electron carriers introduced by the Nb donor spread throughout the crystal, facilitating proton transport.

The result that Nb-doped TiO2 exhibits high protonic and electronic conductivity at around 250 °C in H2 strongly suggests that n-type oxide semiconductors dissolving hydrogen could be a new field to explore mixed protonic and electronic conductors. Furthermore, this finding has great potential for extending the operating temperatures of hydrogen-related electrochemical devices to lower temperatures.

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