Publication date: 10th April 2024
Ternary oxides AmBnOx are used in numerous devices that are exposed to various thermodynamic forces, such as oxygen chemical potential gradient (e.g. solid oxide fuel cells), electric potential gradient (e.g. multi-layered ceramic capacitors), temperature gradient (e.g. thermoelectrics), stress gradient (e.g. piezoelectrics), etc. The materials range from purely ionic conductors to mixed conductors and semiconductors. When these ternary oxides are exposed to external driving forces, especially at high temperatures where the ions that compose the oxide are mobile, the ions migrate, in general with different mobilities. The resulting phenomena of kinetic unmixing and kinetic decomposition have been investigated for many years. However, in most cases severe approximations have been used, such as treating the ternary oxide as a quasi-binary system, and most often only the steady state was considered. Here we analyze the kinetics of unmixing phenomena using a full defect-chemical description of the oxides under consideration. First, we will discuss the kinetics of the Hebb-Wagner polarization kinetics and the implications for bulk resistive switching using SrTiO3 as a model system [1,2]. Second we analyze the kinetics of unmixing of all mobile defects in a ternary oxide using BaTiO3 as a model system. In this way, we can predict the lifetime of the oxide until kinetic decomposition [3].
This research was funded by the Deutsche Forschungsgemeinschaft (DFG) through the priority program SPP1959 “Manipulation of Matter Controlled by Electric and Magnetic Fields: Towards Novel Synthesis and Processing Routes of Inorganic Materials.”
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