Publication date: 10th April 2024
Hysteresis, observed in the current-voltage characteristics of electronic and ionic devices, is a phenomenon in which the shape of the curve is influenced by the speed of measurement. This phenomenon is a result of internal processes that introduce a time delay in the response to external stimuli, causing measurements to depend on past disturbances. Hysteresis and time delay effects find important applications in devices that are explored for resistive switching and neuromorphic computation, such as halide perovskite and organic memristors and transistors for synapses and neurons. Hysteresis and memory effect are also a central component of the electrochemical response of biological protein channels and neurons.
Here we show a classification of various manifestations of hysteresis by identifying common elements. Our approach involves examining hysteresis from multiple perspectives, employing simplified models that capture fundamental response patterns. We investigate system behavior using techniques like linear sweep voltammetry, impedance spectroscopy, and the analysis of transient currents resulting from small voltage steps. Our analysis uncovers two primary types of hysteresis, characterized by how current responds to rapid sweep rates: capacitive hysteresis and inductive hysteresis. These terms correspond to the dominant component in the equivalent circuit, which governs the transient time response.
This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement nº 101097688 (“PeroSpiker”).
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