Publication date: 1st April 2013
The power conversion efficiency of all-solid-state semiconductor sensitized solar cells exhibited a rapid evolution in the past 5 years, reaching recently values close to 11% [1]. The use of alternative light sensitizers such as Sb2S3[2,3] and organometal halide perovskites [1,4] contributed majorly to the impressive progresses of the technology. However, one of the current challenges is expanding the light absorption range from the visible to the near-infrared (NIR) region of the solar spectrum in order to maximize the generated photocurrent. In this context, an innovative electrodeposition route to obtain thin films of Sb2Se3will be here presented. The as-electrodeposited films exhibit amorphous nature. However, nanocrystalline films have been obtained after annealing at temperatures higher than 150ºC in Ar atmosphere. The potential of the obtained films in semiconductor sensitized solar cells has been evaluated by preparing TiO2/Sb2Se3/CuSCN planar devices. The resulting devices generated electricity from the visible and NIR photons with considerable (i.e. > 50%) quantum efficiency (Figure 1a). Although planar architecture is not optimized in terms of charge carrier collection, photocurrents as high as 18 mA/cm2, under simulated solar light (AM1.5G) at 1 sun (100 mW cm-2) (Figure 1b), have been reached in devices based on Sb2Se3annealed at temperatures lower than 300 ºC. An overview about the influence of the microstructural properties of Sb2Se3on the solar cell performance will be given. Strategies of Sb2Se3 integration and impact in nanostructured architectures will be also discussed.
Figure 1: a) External quantum efficiency spectrum and b) current density–voltage curves dark (black) and under simulated solar light (100 mW cm-2) (red) of a TiO2/Sb2Se3/CuSCN solar cell with planar architecture.
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