Publication date: 1st April 2013
The photovoltaic performance of CdTexS1-x quantum dots (QDs) sensitized solar cells (QDSSCs) when tuning the band gap of CdTexS1-x QDs is studied. Tuning band gap was carried out through the control of " x " value ( 0.2, 0.4, 0.6, 0.8, and 1). Fluorine Tin Oxide (FTO) substrates were coated with 20 nm-diameter TiO2 nanoparticles (NPs) paste by the method of G. Syrrokostas et al [1]. Presynthesized CdTexS1-x QDs of approximately the same size ( around 5 ± 1 nm) were adsorbed directly [2,3]onto TiO2 NPs/FTO substrate to serve as sensitizers for the solar cells. The FTO counter electrodes were coated with platinum, while the electrolyte containing I−/I-3 redox species was sandwiched between the two electrodes. The photovoltaic parameters of the assembled QDSSCs were measured underAM 1.5 sun illuminations. As an example, Fig. 1. shows J-V characteristic curve of CdTe0.8S0.2 QDSSCs. The value of the current density (Jsc) increases with increasing "x" value, since harvesting more incident visible light photons. The maximum obtained value of Jsc was 1.1 mA/cm2 for "x=1" value. The open circuit voltages (Voc) were about 0.45 ± 0.01 volt for different "x" value of the assembled CdTexS1-x QDSSCs. Since it is only dictated by the conduction band minimum level of TiO2 NPs and the valance band (VB) of the electrolyte [4]. Furthermore, the photocurrent response of the assembled cells to ON-OFF cycles of the illumination indicates the prompt generation of anodic current.
Fig. 1: J-V characteristic curve of CdTe0.8S0.2 QDSSCs.
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