Proceedings of Online school on Fundamentals of Semiconductive Quantum Dots (QDsSCHOOL)
DOI: https://doi.org/10.29363/nanoge.qdsschool.2021.015
Publication date: 30th April 2021
The high price of state-of-the-art III-V semiconductors is limiting infrared (IR) detection to high-end applications in industry and research. Overcoming technological limitations in fabrication, phototransistors based on colloidal quantum dots (QDs) and chemical vapor deposition (CVD) graphene promise a new generation of low-cost and sensitive IR detectors. Typically, the graphene channel is functionalized with size- and composition tunable light-absorbing QDs by spin coating, dip coating, or drop-casting. By controlled deposition of the QDs onto the active device area, inkjet printing has the potential to reduce the amount of used materials while guaranteeing a high throughput. Here, we explore the charge transport across the interface of an inkjet-printed PbS QDs film to graphene with cryogenic experiments (300K to 80K). We find a polarity change of the photo signal, mediated by surface traps on the QDs that readjust the interface energy barrier.