Publication date: 2nd November 2020
The upscaling of perovskite solar cells (PSCs) fabrication in air with sheet-to-sheet (S2S) and roll-to-roll (R2R) processing is still a challenge that can hinder the industrial development of PSCs. Slot-die printing is one of the promising methods for upscaling PSCs that shows several advantages compared to other techniques such as the possibility to use rigid and flexible substrates, high printing speed and good printing uniformity. Currently, slot die printing method is not widely developed for hysteresis-free p-i-n structures especially under ambient condition.
Here, we demonstrate the application of the slot-die coating and vacuum-assisted solution process (VASP) for the fabrication of planar p-i-n PSCs with the following configuration - ITO/NiO/MAPbI3/PCBM/BCP/Ag. Hole transporting layer (HTL) and absorbing perovskite layer were printed with the slot-die method under ambient conditions. The NiO HTL was printed on ITO glass from the water-based solution of tris(ethylenediamine) nickel acetate that replaced the ethylene glycol as a solvent used in spin coating [1] process. This allows to stabilize meniscus during head motion over the substrate and obtain a continuous thin film. The printing process of perovskite films was optimized with the use of Cl-based additives and precise mixing of different organic solvents (DMF; NMP), especially for ambient conditions. The highly crystalline and smooth MAPbI3 films with the grain size up to 1 µm were obtained confirmed by XRD and SEM measurements. The slot-die printed devices showed average power conversion efficiencies (under 1.5 AM G light spectrum, 100 mW/cm2 intensity) of 14.5% and 16.0% for the champion devices, while the spin-coated devices fabricated in inert atmosphere demonstrated 17.0 %. The obtained results clarified that the slot-die printing and VASP methods can be effectively used for the upscaling of the devices with p-i-n planar structure even in the ambient environment.
Authors gratefully acknowledge the financial support from the Ministry of Education and Science of the Russian Federation in the framework of "Increase Competitiveness Program" of NUST «MISiS» (No K2-2019-13).
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