Publication date: 2nd November 2020
Perovskite light-emitting diodes (PeLEDs) have recently attracted great research luminescence at room temperature in interest for their narrow emissions and solution processability. Remarkable progress has been achieved PeLEDs in recent years [1]. Here we present the new configuration of ambipolar transparent perovskite light emitting device. The combination of voltage induced p-i-n formation and ionically doped carbon electrodes and allows electroluminescence in forward and reverse bias. For this experiment high quality films of randomly oriented SWCNTs were produced by the aerosol (floating catalyst) chemical vapor deposition (CVD) method [1]. PeLEDs were assembled using a glass substrate with ITO stripes as bottom electrode; spin-coated CsPbBr3/I3:PEO composite as emissive layer; SWCNT deposited by a simple press transfer process at room temperature as top electrode.
SWCNT has a sensitive response of electrical properties to doping, due to having only one graphene layer. Any changes on the external graphene layer leads to sensitive response of CNT properties. In direct mode on LED device (+ITO/pero/SWCNT–) positively charged ions coat SWCNT. P-type doping leads to downshifting and change in the Fermi level, that helps to holes injection from SWCNT instead of ITO. Changing the direction of the electrical field coats the surface with oppositely charged ions.
We demonstrate a concept of stacked multicolor tandem pixel. Stack of transparent light emitting units might allow fine color tuning in parallel tandem connection without segregation compared to mixed halide perovskites. This configuration conforms pixel downsizing and make to fabrication of emissive multijunction pixels in a stack. Stacked pixel designs have potential application in head-up displays and augmented reality technologies, due to smaller pixel area compared to conventional display with active matrix.
Figure 1: IV curve of single layer ambipolar PeLED (ITO/pero/SWCNT). Orange curves corresponds to forward sweep, SWCNT doped by Cs+ injects electrons; grey curves correspond to switched mode: SWCNT doped by Br- injects holes. Switching realize by the voltage induced ions migration.
Authors gratefully acknowledges the financial support from the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of
NUST «MISiS» (No K2-2019-13).
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