Publication date: 11th July 2022
In this work we introduce THz time-domain spectroscopy (THz-TDS) as a powerful non-contact tool for the characterization of the conductivity of metallic and semiconducting organic 2D crystalline materials. In a conventional THz-TDS experiment, a freely propagating ~1THz bandwidth reference pulse which is transmitted through air (or through a bare substrate transparent to THz radiation) is compared with a pulse transmitted through a self-standing sample (or a sample deposited onto the substrate). As the THz pulse is measured in the time domain, both, the amplitude and phase changes induced by the sample can be recorded; this enables retrieving the frequency-resolved complex conductivity. Modelling the later with electrical conduction models, allows accessing important key electric parameters as the averaged scattering rate and the plasma frequency from which, carrier density and charge carrier mobility could be inferred [1].
As a demonstration of the capabilities of THz-TDS, we present here several examples of studies of conductivity in 2D-based crystalline semiconducting and metallic MOF and COF materials. In a first example, we show how localization, induced by grain boundaries in polycrystals, modifies long-range charge transport in a semiconducting sample; as a second example we show how the interplane distance between 2D-MOF layers dramatically modifies the monitored conductivity. Finally, correlations between THz-TDS characterization and conventional 2- and 4-probe methods are highlighted.
The authors would like to thank the 2021-5A/AMB-20942 - Programa de Atracción de Talento de la Comunidad de Madrid and the 20FUN03/f11 COMET – European Metrology Programme for Innovation and Research (EU). Dr. Vasileios Balos would also like to thank the Marie Skłodowska-Curie Actions programme MSCA-IF-2020-101030872 for funding.