< Abstract >
Transient Photo-response of Halide
Perovskite on Optoelectronic Devices
So-Yeon Kim, Juan Bisquert*
Instituto de Tecnología Química. Universitat Politècnica de València- Consejo Superior de
Investigaciones Científicas (UPV-CSIC).
Perovskite and Organic Semiconductors for Next-Generation Photodetectors and Space
Application (NextPDs 2024)
Dubrovnik, Croatia, 2024 June 10th - 12th
Halide perovskites (HPs) have been attracted as potential materials with their superior opto-
electronic properties such as high absorption coefficient, long diffusion length of charge carrier,
tunable bandgap, low exciton binding energy, and so on. HPs are applied to various fields such
as solar cells, photodetectors, sensors, LED, photonic memory devices and neuromorphic
devices using their characteristic properties that exhibit electrical properties in response to light
sources. Among them, HPs-based photodetectors, which can convert light sources of various
wavelength into electrical signals, have been actively reported in various HP materials and
devices structures until recent research and extensively applied to optoelectronic memories and
synapses. It is important to understand the driving principle and characteristic hysteresis effects
of the HPs-based optoelectronic device to efficiently evaluate devices’ performance and apply
various fields. HPs-based photodetectors are divided into photodiodes, photoconductors, and
phototransistors according to the vertical or lateral stacked structure of the device, in which the
devices run with various working mechanisms in each structure. We focus on investigating the
photoreaction and transient response in the simple symmetrical photodetector structures with
various HPs to identify ionic and electronic transport embedded in HPs. The various HPs-based
photodetectors we have covered exhibit several transient photocurrent responses depending on
a variety of specific variables, such as the composition and structure of active halide
perovskites, the channel length within the device, response time, etc. These characteristic
transient current responses are also seen not only in photodetectors but also in devices in
various fields such a memristors and neuromorphic devices. Modeling and analyzing these
current responses can help effectively design and evaluate next-generation multi-functional
optoelectronic fields and will open up great possibilities.
References
[1] Bisquert, J.; Gonzales, C.; Guerrero, A., Transient On/Off Photocurrent Response of Halide
Perovskite Photodetectors. The Journal of Physical Chemistry C 2023, 127 (43), 21338-21350.
[2 ] Bisquert, J., Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells
and Memory Devices Analysis by Neuron-Style Models. Advanced Energy Materials n/a (n/a),
2400442.