Publication date: 19th April 2024
Metal halide perovskites are a groundbreaking family of semiconductors finding applications on several areas of the optoelectronics field. They have attracted attention for their bandgap tunability, long carrier lifetimes, high defect tolerance and solution processable fabrication [1, 2]. Specifically for radiation detection, their large absorption coefficient allows efficient beam absorption even for low thicknesses, associated with the large-Z elements in their composition (Sn, I, Cs, Pb, Bi). In fact, they have already overcome the state-of-the-art X-ray detectors becoming a serious candidate for the next generation of radiation detectors [3].
From the possible architectures, we focus on lateral photoconductors, which excel in their simple and low-cost integration with flexible electronic backplanes. Besides, they have the remarkable ability to decouple the absorber thickness (usually hundreds of μm to 1 mm) [4] from the distance between electrodes, allowing for an operation at low bias voltage. However, relatively to the common vertical photoconductor architecture of radiation detectors, the planar type suffers from lower sensitivity due the unfavourable electric field distribution, and higher dark current from the absence of selective blocking layers.
To tackle this, we printed and micro-structured in-planar electrodes, improving the carrier collection uniformity over the whole volume of the absorber layer. The perovskite absorber was blade coated on the electrodes, from a microparticle ink synthesized with non-toxic solvents [5]. The all-printed devices showed more stable dark current and better sensitivity to white light in the intensity range 10-4 mW/cm2 to 2.5 mW/cm2 than non-printed devices with the same architecture. This resulted in an ON OFF ratio of 4×102 for the most intense light conditions and 8 V of applied bias, a comparable value to reported flexible photodiodes and vertical photoconductors [6].
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