Highly Reproducible Quaternary Quantized Conductance States in Organic Resistive Switches for Multilevel Memory Applications
Arti Bisht a b, Ajeet Kumar a b
a CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, Delhi 110012
b Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
Proceedings of Neuronics Conference (Neuronics)
València, Spain, 2024 February 21st - 23rd
Organizers: Sabina Spiga and Juan Bisquert
Oral, Arti Bisht, presentation 001
DOI: https://doi.org/10.29363/nanoge.neuronics.2024.001
Publication date: 18th December 2023

Memristor-based multi-level memory systems are gradually breaking through the limitations of traditional binary logic systems in terms of critical figures of merit, such as low power operation, operating speed, and circuit complexity. Logic gates and functions have been demonstrated in various ways, confirming their potential as a useful emerging computing device. However, stateful logic's spatio-temporal efficiency is not good enough to supplant traditional computing technologies due to the random formation of conducting filament (CF). We present inter-quantized conductance (QC)-state switching in a highly reproducible and stable quaternary QC-state memristor based on Al/iPrP-PDI/ITO. Memristor shows excellent bipolar switching performance of high continuous cycling with large ON/OFF ratios and long retention time with low operating voltages, as well as being remarkably reproducible over two years. The switching parameters' temporal and spatial variability was studied using 880 cycles across ten devices and found to be highly reproducible [1]. Furthermore, during SET/RESET cycles, discrete quantized conductance states were detected in I-V traces due to the development of atomic point contacts in the conducting filaments. Compliance current (Ic) and stop voltage (Vs) were used to control the CF. QC states were analyzed statistically, and three distinguished QC states, i.e., 1G0± 0.5G0, 3.5G0± 0.5G0, 7.5G0± 0.5G0, were found to be reproducibly available as stable memory levels. Controllable interstate switching among these QC states was also observed. Control on various switching configurations, such as switching ON to different QC-states, switching OFF from QC, and controlled inter-state switching from one QC-state to another, has been demonstrated by imposing current compliance and stop-voltage, showing potential for implementation in multi-level logic. Overall, iPrP-PDI has the potential to be an excellent choice for durable, high-performance, and highly dense multi-level memory devices for practical applications.

Keywords: Quantized conductance; organic semiconductors; isopropyl phenyl-Perylenediimide(iPrP-PDI); multi-level memory; inter-state switching.

The author AB would like to acknowledge the Department of Science and Technology INSPIRE program for providing the research fellowship.

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