Publication date: 9th January 2023
Abstract: For ultra-high-density storage, multilevel resistive switching (RS) memories are an appealing technology. Despite existing studies of the switching behaviours of organic polymers, the switching mechanism of organic polymers is still not fully understood. This study investigated the switching mechanism of perylene diimide (PDI) based resistive swiching device, demonstrating bipolar switching. Controlling stable quantized Conductance states is indispensable for the realisation of multilevel memory. Stable quantized conductance states have been demonstrated by imposing the compliance current. Moreover, the device showed good endurance with >200 times HRS/LRS switching cycles and >105 second retention time. All these properties indicates that ITO/PDI/Al resistive switching device does have the potential to be used in multilevel memory storage applications.
Acknowledgement
Authors want to thank the Academy of Scientific and Innovative Research (AcSIR) for giving the opportunity and DST-INSPIRE for financial support.