Publication date: 9th January 2023
Synaptic devices with synchronized memory and processor are considered the core elements of Neuromorphic computing (NC). So far, most synaptic devices are based on resistive memories, where the device resistance is tuned with applied voltage or current. However, the use of electric current in such resistive devices causes significant power dissipation by Joule heating. Higher energy efficiency has been reported in materials exhibiting voltage control of magnetism (VCM). In particular, voltage-driven ion motion to modulate magnetism (magneto-ionics) is an emerging VCM mechanism that could offer new prospects for low-power implementation of NC. In the present work, we exploit voltage-controlled nitrogen ion motion in transition metal nitrides (FeCoN) (i.e., nitrogen magneto-ionics) to emulate biological synapses. In the proposed device, we have realized multilevel non-volatile magnetic states for analog computing and high-density storage. Moreover, essential synaptic functionalities have been successfully emulated. Furthermore, the device shows excellent retention and high endurance for real life hardware implementation of NC. The working mechanism of the device has been probed by X-ray photoelectron spectroscopy. This research provides insight into the great potential of magneto-ionics-based synaptic devices for spin-based neuromorphic computing.
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