DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.057
Publication date: 9th January 2023
This talk addresses redox-based resistive switching devices also called nanoionic memories or memristive elements, operating according to the bipolar valence change mechanism (VCM), which has become a major trend in electronic materials and devices over the last decade due to its high potential for non-volatile memories and future neuromorphic computing. We will provide detailed insights into the status of understanding of these devices as a fundament for their use in the different fields of application. The talks covers the microscopic physics of memristive states and the switching kinetics of VCM devices. It is shown that the switching of all variants of VCM cells relies on the movement of mobile donor ions, which are typically oxygen vacancies or cation interstitials. Emphasis is placed on the extreme nonlinearity of switching kinetics described by physics-based multiscale modeling, ranging from ab initio methods to kinetic Monte Carlo and finite element models to compact models that can be used in circuit simulators. The talk concludes with a treatment of the highly relevant reliability issues and a description of the failure mechanisms, including mutual trade-offs.
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