DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.048
Publication date: 9th January 2023
With the unprecedented rise of halide perovskites in the field of photovoltaic, ion migration comes out as a bane that results in unfavorable I-V characteristics in perovskite solar cells and has been a major drawback towards their physical implementation. Recently this unwelcomed trait is being exploited to unlock new opportunities, especially in the field of memristors for information storage and computation. This report introduces lead-free all-inorganic Cs3Sb2I9 for realizing multifunctional memristive behavior using its two polymorphs (dimer and layered). The dimer-based devices show an initial low-resistive state along with a self-compiling nature that brings it to the high resistive state under suitable bias due to the self-formed metallic bridges. The devices based on the layered phase, in contrast, are initially in a high state and thereby require a voltage to switch to a low-resistive one and are found to obtain better performance reliability and environmental stability. A closed-loop pulsed switching (CLPS) measurement protocol has been employed to further increase the devices' endurance by passively controlling the make and break of the conducting bridges. Finally, interface-modified devices have exhibited multiple functionalities of the human brain, such as excitatory/inhibitory postsynaptic currents and spike voltage/duration/timing dependent plasticity, the transition from short-term memory to long-term memory, and potentiation/depression behavior with extremely low energy consumption per synaptic event. The device characteristics have also followed the Ebbinghaus curve of forgetting and the Atkinson–Shiffrin memory model applicable to human brains. This study hence concludes that the introduction of lead-free all inorganic Cs3Sb2I9 as a memory device shows better promise for multifunctional memory elements using different polymorphs and devices structure and will pave the way towards realizing energy-efficient artificial synaptic functions for next-generation memory applications.
A.J.P. acknowledges the JC Bose National Fellowship of SERB (JBR/2021/000001) of SERB and also the Asian Office of Aerospace Research and Development (AOARD) bearing grant no. FA2386-21- 1-4031. S.P. acknowledges the CSIR Fellowship no. 09/080(1107)/2019- EMR-I (roll no. 528223).
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