DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.046
Publication date: 9th January 2023
Advancing the memristor concepts is one of the primary topics in neuromorphic computing. Among the main routes in this direction is development of bio-realistic dynamical memristors, i.e. those that mimic multiple modes of biological behavior. This is expected to boost the performance in such tasks as spatio-temporal pattern recognition due to encapsulated transient operation, which is close to the behavior of the biological counterparts in visual cortex. The concept of second order memristor is a successor of the classical memristor concepts that allows to realize the short-term synaptic dynamics and its influence on the long-term synaptic modification. Here we present the second order memristor based on La0.7Sr0.3MnO3 / BaTiO3 / La0.7Sr0.3MnO3 – an all-oxide multiferroic tunnel junction [1]. We show the ability of analog resistance modulation with voltage pulses, together with an inherent feature of short-term memory. Based on this, we demonstrate the emulation of multiple synaptic learning behaviors: short and long-term potentiation / depression, paired-pulse facilitation / depression, spike rate- and experience-dependent plasticity with the sliding threshold frequency effect, in accordance with the Bienenstock-Cooper-Munro theory. The long-term memory effect is explained on the basis of reversible redox reaction at La0.7Sr0.3MnO3 / BaTiO3 interfaces, which modifies the ratio of Mn3+ / Mn4+ ions, responsible for the conduction in these regions and in the overall device. And the short-term behavior is attributed to the voltage-induced transient dynamics of oxygen vacancy distribution and dielectric polarization. We believe that the demonstrated second order memristor concept deepens the understanding of dynamical behavior in neuromorphic devices and may be of use in development of hardware artificial neural networks.
The authors thank D. Hrabovsky from the “Service Basses Températures” of Sorbonne Université for his tremendous help with electrical measurements, E. Dandeu from INSP for his precious help at clean room facility and F. Lemarié for the TEM lamella preparation by FIB. The authors acknowledge the “Agence Nationale de la Recherche (ANR)” for funding supports (grant no. ANR15-CE09-0005-01 and grant no. ANR-11-EQPX-0020).
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