DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.044
Publication date: 9th January 2023
The switching kinetics and electrical behavior of halide perovskite memristive devices, which are based on ion migration with low activation energy, are similar to those of biological synapses, making these devices one potential candidates for brain-inspired computing. Here we report lead free zero dimensional Cs3Bi2I9 perovskite thin films as an active switching material in flexible crossbar memory devices, which exhibits typical bipolar resistive switching (RS) characteristics with high on/off ratio (106), high endurance (104 cycles), long retention (105s) and device yield of more than 93%. In addition, electrical pulse engineering on devices exhibits several synaptic characteristics along with paired pulse facilitation (PPF), long-term potentiation (LTP) / long-term depression (LTD) characteristics with non-linearity of 0.7 /1.2 for 50 conducting states was obtained. In particular, extremely low cycle-to-cycle variations (2.3%) during long-term potentiation and depression processes over 55000 pulses, low devices- device variation are achieved. Thus, a high classification accuracy of 92% is demonstrated in the Modified National Institute of Standards and Technology (MNIST) simulations. This work emphasizes the prospect of zero dimensional Cs3Bi2I9 perovskite thin-films toward designing of next-generation high-performance analog neural networks (ANN).
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