DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.032
Publication date: 9th January 2023
Halide perovskite materials are mixed electronic and ionic conductors that find use in several applications. The ionic conductivity is responsible for a the memory effect that leads to hysteresis in the solar cells configuration.1 Here we explain how this ion migration can be used to our advantage to promote formation of conductive and insulating states making them useful as resistive memories (memristors). We show that the working mechanism and performance of the memory devices can be tuned and improved by a careful selection of each structural layer. Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite2, the nature of the buffer layer3 and the nature of the metal contact4. In addition, we develop an electrical model to account for the observed j-V response.5 Overall, we provide solid understanding on the operational mechanism of halide perovskite memristors that unveils the connection between electronic and ionic conduction.
We thank the financial support from Ministerio de Ciencia e Innovación of Spain (MICINN) (PID2019-107348GB-100).
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