DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.030
Publication date: 9th January 2023
Metal halide perovskites, with their superior electronic properties, solution processibility and scalability, are promising candidates for optoelectronic applications such as solar cells and LEDs. Although of relevance to thin film transistor applications, for perovskite systems, TFT operation at room temperature is primarily achieved via precise compositional, microstructural control or via surface/substrate/electrode treatments. Here, tin doped indium oxide is utilized as source/drain contacts to fabricate a room temperature operational n-type solution-processed Cs(MAFA)Pb(BrI) transistor. The inherent photo response of the perovskite channel and the gate bias modulation capability of the transistor configuration is utilized to demonstrate optical learning in these TFTs. By modulating the gate bias polarity, to boost or suppress the channel conductance, gradual or immediate forgetting of optical learning is achieved. Such TFT configuration and opto/electrical learning/forgetting schemes opens an avenue to employ perovskites as optical learning pixels
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