Exploiting the ionic and electronic properties of halide perovskites in memristive devices
Nripan Mathews a
a Nanyang Technological University, Nanomaterials Laboratory, S2.1-B5-01, School of Electrical & Electronic Engineering, NTU, Singapore, Singapore, Singapore
Proceedings of Neuromorphic Materials, Devices, Circuits and Systems (NeuMatDeCaS)
VALÈNCIA, Spain, 2023 January 23rd - 25th
Organizers: Rohit Abraham John, Irem Boybat, Jason Eshraghian and Simone Fabiano
Invited Speaker, Nripan Mathews, presentation 021
DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.021
Publication date: 9th January 2023

Halide perovskites have been under the focus for photovoltaic applications where their power conversion efficiencies have soared to efficiencies exceeding 25%. They have also garnered tremendous research interest over recent years for the development of next-generation light-emitting diodes (PeLED) in optical displays and light sources. The spotlight on this class of semiconducting material stems from several of its enviable traits such as long carrier diffusion length, defect tolerance, high colour purity, and spectral bandgap tunability which spans across the visible and infrared spectrum.

 

This talk will focus on our efforts on utilising the ionic characteristics of halide perovskites to enable memristive devices that can be employed for neuromorphic applications. The influence of the ionic compositions and interfacial layers in the switching behaviour of the devices would be explained. Going beyond two terminal devices, our recent efforts on three terminal devices would also be covered.

 

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