DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.016
Publication date: 9th January 2023
Ferroelectric field-effect transistor (FeFET) is a three-terminal device with a non-volatile property. This device has the functionalities of logic and memory in a single device, which can be used for in-memory computing in non-Von Neumann architectures. HfO2-based ferroelectric materials, especially HfZrO2 (HZO), attract the most attention due to CMOS compatibility and scalability, while it has relatively weak polarization [1]. In order to improve HZO-based FeFET characteristics, it is necessary to enhance HZO ferroelectric properties. However, many works do not take into account the fundamental compromise on dielectric breakdown strength (BDS), transistor ON/OFF current (ION/IOFF) ratio, and memory window (MW) due to the enhanced polarization [2], [3]. In this work, we propose a method of stress memorization based on the thermal expansion mismatch of the TiN/W stacked capping layer in order to control the ferroelectric orthorhombic phase in the HZO layer and the corresponding polarization in optimal value [4]. Our optimized FeFET shows good transistor and memory characteristics with large BDS of ≥4.8 MV/cm, large ION/IOFF ratio of ≥106, large MW of >2 V, and linear potentiation and depression of -0.84 and -2.04.
This work is supported by Agency for Science, Technology and Research (A*STAR), Singapore, under its AME Programmatic Funds (A1892B0026 and A18A1B0045), as well as Singapore Hybrid-Integrated Next-Generation μ-Electronics (SHINE) Centre funding programme. Shih-Hao Tsai is supported by Applied Materials – NUS Ph.D. Scholarship Program.
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