Stable non-chaotic random lasing in FASnI3 perovskite films
Vladimir Chirvony a, Isaac Suarez b, Jesus Sanchez-Diaz c, Rafael Sánchez c, Jesús Rodríguez-Romero d, Iván Mora-Seró c, Juan Martínez-Pastor a
a Instituto de Ciencia de los Materiales, Universidad de Valencia, Valencia 46980, Spain
b Escuela Técnica Superior de Ingeniería, Universidad de Valencia, Valencia 46100, Spain, Avenida de la Universidad s/n, Burjassot, Spain
c Institute of Advanced Materials (INAM), Universitat Jaume I, Castelló de la Plana, Castelló 12006, Spain
d Facultad de Química, Universidad Nacional Autónoma de México, Coyoacán, Ciudad de México 04510, Mexico
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Spring Meeting 2022 (NSM22)
#PhotoPero22. Photophysics of Halide Perovskites and Related Materials - from Bulk to Nano
Online, Spain, 2022 March 7th - 11th
Organizers: Sascha Feldmann, Annamaria Petrozza and Ajay Ram Srimath Kandada
Contributed talk, Vladimir Chirvony, presentation 301
DOI: https://doi.org/10.29363/nanoge.nsm.2022.301
Publication date: 7th February 2022

In this work we show that thin polycrystalline films of spin-coated formamidinium tin triiodide (FASnI3) perovskite demonstrate efficient random lasing (RL) possessing distinguished optical properties such as high mode stability, very high quality factor (~ 104) and low threshold (≈ 2 and ≈ 25 microJ/cm2 for 15 and 300 K, respectively). While usually RL is characterized by chaotic changes of the narrow lines spectral positions, the found in our case RL mode stability is a unique property, which is observed here for the first time for polycrystalline semiconductor systems. We demonstrate that the efficient random lasing and mode stability are due to the high efficiency of light scattering by FASnI3 grains, which is a result of high refractive index of the material (higher than in the case of Pb-based halide perovskites) as well as of optimized grain size distribution (average size is close to the emission wavelength). We demonstrate also that different excitation conditions are required for generation of ultra-narrow RL lines and rather broad-band Amplified Spontaneous Emission (ASE): RL lines dominate when excitation spot size is a few tens of micrometers, while ASE dominates in case of large size excitation spot of a few hundreds of micrometers. From the above, it follows that the stability in time of narrow RL lines is ensured by the strong space localization of RL modes and the absence of interaction between them [1].

[1] Chirvony, V. S.; Suárez, I.; Sanchez-Diaz, J.; Sánchez, R. S.; Rodríguez-Romero, J.; Mora-Seró, I.; Martínez-Pastor, J. P. Stable non-chaotic high Q near-infrared random lasing in thin polycrystalline films of lead-free formamidinium tin triiodide perovskite. To be submitted.

This work has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 862656 (project DROP-IT).

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