Proceedings of nanoGe Spring Meeting 2022 (NSM22)
DOI: https://doi.org/10.29363/nanoge.nsm.2022.290
Publication date: 7th February 2022
Abstract: Despite of huge success in photovoltaic community, Pb based halide perovskites have energy band gap higher than the optimal band gap required for single junction solar cells, governed by the Shockley–Queisser radiative limit. Sn based perovskites emerge as an alternative with rapidly improving efficiencies. Due to comparable optoelectronic properties as the Pb counterpart and their ability to lead to lower band gaps, Sn based perovskites open a new door to all-perovskite tandem solar cells. Along with efforts for efficiency, it is worth analysing the in-depth recombination dynamics for further development of Sn based perovskite solar cells (PSCs). The long photo-excited charge carrier lifetime (τ) is often attributed for the high performance of PSCs. Herein, we study the effect of ‘B’ cation in ABX3 (A = MA+, FA+, and Cs+; B = Pb2+, Sn2+, and X = I−) perovskite structure on the charge carrier recombination dynamics to understand the possible recombination mechanism. We fabricated PSCs with p-i-n configuration based on FA0.95Cs0.05PbI3 (pure Pb), MA0.20FA0.75Cs0.05SnI3 (pure Sn), and (MAPbI3)0.4(FASnI3)0.6 (Pb-Sn mixed) perovskitres. We optimized the Sn based perovskite thin film (pure Sn) in terms of moisture and thermal stability in order to minimize the error due to perovskite degradation. Further, we compared the charge carrier recombination dynamics of the three devices through transient photovoltage (TPV) measurement.1 TPV is used to establish the relation between charge carrier density (n) and recombination rate constant (k) under different DC background intensities.2 This study establish the rate law of charge carrier decay in the three devices and reveals the nonlinear dependence of k on n in Sn based PSCs, which will be correlated to the slow relaxation lifetime of the charge carrier and their recombination through the defect states in the perovskite thin films.
Keywords: Pb-free perovskite, rate law of charge carrier decay, transient photovoltage, defects, bimolecular recombination
The authors would like to acknowledge the financial support granted by the Ministry of New and Renewable Energy, India (16MNRE002). This work was also partially supported by the UKRI Global Challenge Research Fund Project, SUNRISE (EP/P032591/1). The authors also acknowledge the support of the National Centre for Photovoltaic Research and Education (NCPRE), IIT Bombay, for deposition facility and characterization. The authors also acknowledge the ESCA, Central Facility, IIT Bombay, for UPS measurement. The authors also acknowledge Pilkington for transparent conductive oxide electrodes.
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