Disruptive Full Spectrum Optical Gain in Bulk-Like CdS/Se Quantum Dots through Strong Band Gap Renormalization
Ivo Tanghe a, b, c, Isabella Wagner d, e, Margarita Samoli b, c, Kai Wen e, f, g, Servet Ataberk Cayan b, c, Ali Khan h, Dries Van Thourhout a, b, Justin Hodgkiss d, e, Zeger Hens b, c, Iwan Moreels b, c, Pieter Geiregat b, c
a Photonics Research Group, Ghent University, Belgium, Technologiepark-Zwijnaarde, 126, Gent, Belgium
b Center for Nano- and Biophotonics, Ghent University, Belgium, Technologiepark-Zwijnaarde, 126, Gent, Belgium
c Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Ghent, Belgium
d School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand, PO Box 600, Wellington, New Zealand
e MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand., PO Box 600, Wellington, New Zealand
f Robinson Research Institute, Victoria University of Wellington, Wellington, New Zealand, PO Box 600, Wellington, New Zealand
g The Dodd-Walls Centre for Photonic and Quantum Technologies, New Zealand
h Institute of Nano Science and Technology, Sector 81, Sahibzada Ajit Singh Nagar, Punjab, India
Nanostructured semiconductors are heavily investigated for their applications in light emission such as light emitting diodes and, more challenging, lasers[1-4]. Using quantum confined Cd-based QDs, several groups have shown light amplification and ensuing lasing action in the red part of the spectrum. Although further work is necessary to reduce gain threshold densities for efficient lasing action, there has been some push toward moving away from the current red gain band region, toward green and near-infrared stimulated emission.
In this work, we take a look at weakly confined “giant” CdS and CdSe Quantum Dots which display disruptive optical gain metrics in the green and near-infrared spectrall region. While showing similar gain thresholds compared to state-of-the-art materials, the gain window, amplitude (up to 50000/cm) and gain lifetime (up to 3ns) outpace other materials in the same spectral region.
These remarkable results are explained by using a bulk semiconductor gain model, which can be done due to the large size of the quantum dots (8-12 nm). We can quantitatively reconstruct the gain spectrum with this model, yet only by including large bandgap renormalizations (up to 70 meV). This inclusion helps us to understand the gain mechanism in these particles. Our results indicate a paradigm shift towards weakly confined photo-physics as a means to push quantum dots towards efficient solution processable lasers.
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